2013. 5. 08 1/6 semiconductor technical data KF7N65FM n channel mos field effect transistor revision no : 0 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellentavalanche characteristics. it is mainly suitable for active power factor correction and switching mode power supplies. features h v dss =650v, i d =7a h drain-source on resistance : r ds(on) (max)=1.2 ? @v gs =10v h qg(typ.)= 30nc maximum rating (tc=25 ? ) * : drain current limited by maximum junction temperature. g d s pin connection 1. gate2. drain 3. source to-220is (1) a a b b c c d d e e f f g g h h 1.47 max1.47 max j j k k l m l n nn o o q r q r 123 m dim millimeters *single gauge lead frame 10.16 0.2 + _ 15.87 0.2 + _ 2.54 0.2 + _ 0.8 0.1 + _ 3.18 0.1 + _ 0.5 0.1 + _ 3.23 0.1 + _ 13.0 0.5 + _ 2.54 0.2 + _ 4.7 0.2 + _ 6.68 0.2 + _ 2.76 0.2 + _ 3.3 0.1 + _ 12.57 0.2 + _ characteristic symbol rating unit drain-source voltage v dss 650 v gate-source voltage v gss ? 30 v drain current @t c =25 ? i d 7* a @t c =100 ? 4.2* pulsed (note1) i dp 18* single pulsed avalanche energy(note 2) e as 212 mj repetitive avalanche energy(note 1) e ar 1.6 mj peak diode recovery dv/dt(note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 44.6 w derate above 25 ? 0.36 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 2.8 ? /w thermal resistance, junction-to-ambient r thja 62.5 ? /w downloaded from: http:///
2013. 5. 08 2/6 KF7N65FM revision no : 0 electrical characteristics (tc=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 650 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 ? - 0.65 - v/ ? drain cut-off current i dss v ds =650v, v gs =0v, - - 10 u gate threshold voltage v th v ds =v gs , i d =250 a 2.5 - 4.5 v gate leakage current i gss v gs = ? 30v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =3.5a - 1.0 1.2 ? dynamic total gate charge q g v ds =520v, i d =7.0a v gs =10v (note4,5) - 24 - nc gate-source charge q gs - 5.0 - gate-drain charge q gd - 12 - turn-on delay time t d(on) v dd =325v i d =7.0a r g =25 ? (note4,5) - 35 - ns turn-on rise time t r - 35 - turn-off delay time t d(off) - 120 - turn-off fall time t f - 35 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 910 - pf output capacitance c oss - 111 - reverse transfer capacitance c rss - 17 - source-drain diode ratings continuous source current i s v gs KF7N65FM 1 marking downloaded from: http:///
2013. 5. 08 3/6 KF7N65FM revision no : 0 normalized breakdown voltage bv dss gate - source voltage v gs (v) fig1. i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 0 10 -1 10 1 68 41 0 2 fig2. i d - v gs fig3. bv dss - t j fig4. r ds(on) - i d -100 -50 0.8 0.9 1.21.1 1.0 05 0 100 150 drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ) fig5. i s - v sd 0.2 0.4 0.8 1.0 1.2 0.6 1.4 reverse drain current i s (a) 3.02.5 1.5 1.0 0.5 0 2.0 01 2 69 31 8 15 junction temperature tj ( ) c source - drain voltage v sd (v) 10 0 10 -1 10 1 fig6. r ds(on) - t j junction temperature t j ( ) 0 50 -100 -50 100 150 normalized on resistance 0.0 0.5 3.02.5 1.0 1.5 2.0 c v gs =10v i ds = 3.75a v gs = 0v i ds = 250 100 c 25 c 150 c 25 c 11 0 0 0.1 10 0.1 1 10 100 v gs =10v, 7v v gs =10v v gs =7v v ds =20v v gs =5v downloaded from: http:///
2013. 5. 08 4/6 KF7N65FM revision no : 0 gate - charge q g (nc) 0 1210 62 4 8 28 32 12 4 20 16 24 8 0 fig8. q g - v gs gate - source voltage v gs (v) 10 4 10 3 10 2 10 1 10 0 i d =7a v ds = 520v drain - source voltage v ds (v) capacitance (pf) fig 7. c - v ds 0 1 02 03 04 0 fig11. transient thermal response curve normalized transient thermal resistance time ( sec ) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 1 10 0 c rss c oss c iss fig10. safe operation area drain current i d (a) drain - source voltage v ds (v) 10 1 10 1 10 -2 10 -1 10 0 10 0 10 2 10 2 10 3 t c = 25 t j = 150 single nonrepetitive pulse c c dc operation in this area is limited by r ds(on) 10ms 1ms 100 s 10 s duty=0.5 0.0 5 0.1 0.2 0.02 0. 01 s ingle pulse - duty factor, d= t 1 /t 2 t 1 t 2 p dm downloaded from: http:///
2013. 5. 08 5/6 KF7N65FM revision no : 0 fig12. gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma fast recovery diode 10v 10 v 25 r l q g q gd q gs q t p fig14. resistive load switching fig13. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 l time e as = li as 2 bv dss - v dd bv dss 12 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 50v 0.8 v dss 0.5 v dss downloaded from: http:///
2013. 5. 08 6/6 KF7N65FM revision no : 0 fig15. source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.5 v dss downloaded from: http:///
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